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The product process was gradually introduced into SGT
issuing time ： 2022-09-09 10:58:57
SGT MOSFET device scheme
A. Optimized protocell structure with the lowest epitaxial resistivity to obtain very low Rsp;
B. Adopt the self-alignment process design technology and the upper and lower structure of the primitive cell to obtain a high density of 645M/ INCH2, so as to obtain a very low Rsp;
C. Adopt advanced DFN package for better heat dissipation performance and on-resistance
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